VS-30EPF06-M3

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Vishay General Semiconductor - Diodes Division

DIODE GP 600V 30A TO247AC

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Vishay General Semiconductor - Diodes Division

DIODE GP 600V 30A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30EPF06-M3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.41 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Speed
Vishay General Semiconductor - Diodes Division VS-30EPF06PBF	600 V	200 mA 500 ns	1.41 V	160 ns	100 µA	Standard	Through Hole	TO-247AC Modified	TO-247-2	150 °C	-40 °C	30 A
Vishay General Semiconductor - Diodes Division VS-30EPF06-M3	600 V	200 mA	1.41 V		100 µA	Standard	Through Hole	TO-247AC Modified	TO-247-2	150 °C	-40 °C	30 A	Standard Recovery >500ns

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General part information

Diode 600 V 30A Through Hole TO-247AC Modified

Technical documentation and resources