US1GH

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Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

50NS, 1A, 400V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	US1GH

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Qualification	AEC-Q101
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Grade	Package / Case	Speed	Qualification	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation US1GHR3G	Automotive	DO-214AC SMA	200 mA 500 ns	AEC-Q101	Standard	150 °C	-55 °C	1 V	DO-214AC (SMA)	5 µA	Surface Mount	50 ns	1 A	15 pF	400 V
Taiwan Semiconductor Corporation US1GH	Automotive	DO-214AC SMA	200 mA 500 ns	AEC-Q101	Standard	150 °C	-55 °C	1 V	DO-214AC (SMA)	5 µA	Surface Mount	50 ns	1 A	15 pF	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 400 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources