2SB1188T100R

Rohm Semiconductor

TRANS GP BJT PNP 32V 2A 2000MW 4-PIN(3+TAB) MPT T/R

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Rohm Semiconductor

TRANS GP BJT PNP 32V 2A 2000MW 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1188T100R

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	180 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Frequency - Transition	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type
Rohm Semiconductor 2SB1188T100Q	32 V	2 W	800 mV	1 µA	150 °C	120	Surface Mount	100 MHz	TO-243AA	2 A	PNP
Rohm Semiconductor 2SB1188T100P	32 V	2 W	800 mV	1 µA	150 °C	82	Surface Mount	100 MHz	TO-243AA	2 A	PNP
Rohm Semiconductor 2SB1188T100R	32 V	2 W	800 mV	1 µA	150 °C	180 hFE	Surface Mount	100 MHz	TO-243AA	2 A	PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A)

VCE(sat) = -0.5V (Typ.)

(IC/IB = -2A / -0.2A)

Technical documentation and resources