RS1G180MNTB

NRND

Rohm Semiconductor

TRANS MOSFET N-CH 40V 18A 8-PIN HSOP T/R

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NRND

Rohm Semiconductor

TRANS MOSFET N-CH 40V 18A 8-PIN HSOP T/R

Technical Specifications

Parameters and characteristics for this part

Specification	RS1G180MNTB

Current - Continuous Drain (Id) @ 25°C	80 A, 18 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1293 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	30 W, 3 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	8-HSOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Pch -40V -78A, HSOP8, Power MOSFET

Part	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Rohm Semiconductor RS1G201ATTB1	2.5 V	40 V	130 nC	5.2 mOhm	8-HSOP	P-Channel	8-PowerTDFN	6890 pF	78 A	20 A	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	20 V
Rohm Semiconductor RS1G180MNTB	2.5 V	40 V			8-HSOP	N-Channel	8-PowerTDFN	1293 pF		18 A 80 A	MOSFET (Metal Oxide)	Surface Mount			20 V	7 mOhm	4.5 V 10 V	150 °C	19.5 nC	3 W 30 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly