TK6A65D(STA4,Q,M)

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 6A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK6A65D(STA4,Q,M)

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	1.11 Ohm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)
Toshiba Semiconductor and Storage TK6A65W,S5X	1 Ohm	N-Channel	30 V	390 pF	Through Hole	11 nC	10 V	MOSFET (Metal Oxide)	TO-220SIS	650 V	3.5 V	TO-220-3 Full Pack	5.8 A	150 °C
Toshiba Semiconductor and Storage TK6A65D(STA4,Q,M)	1.11 Ohm	N-Channel	30 V	1050 pF	Through Hole		10 V	MOSFET (Metal Oxide)	TO-220SIS	650 V		TO-220-3 Full Pack	6 A	150 °C	20 nC	45 W

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General part information

N-Channel 650 V 6A (Ta) 45W (Tc) Through Hole TO-220SIS

Technical documentation and resources