XK1R9F10QB,LXGQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 160A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	XK1R9F10QB,LXGQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	184 nC
Input Capacitance (Ciss) (Max) @ Vds	11500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.92 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Vgs (Max)	Supplier Device Package	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature
Toshiba Semiconductor and Storage XK1R9F10QB,LXGQ	11500 pF	MOSFET (Metal Oxide)	160 A	3.5 V	184 nC	6 V 10 V	100 V	N-Channel	20 V	TO-220SM(W)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	375 W	1.92 mOhm	175 °C

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General part information

N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources