2SK1775-E

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Renesas Electronics Corporation

MOSFET N-CH 900V 8A TO3P

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Renesas Electronics Corporation

MOSFET N-CH 900V 8A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1775-E

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1730 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology
Renesas Electronics Corporation 2SK1775-E	8 A	10 V	N-Channel	60 W	1730 pF	Through Hole	SC-65-3 TO-3P-3	TO-3P	30 V	900 V	150 °C	1.6 Ohm	MOSFET (Metal Oxide)

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Distributor	Package	Quantity	$

General part information

N-Channel 900 V 8A (Ta) 60W (Tc) Through Hole TO-3P

Technical documentation and resources