SH8K15TB1

NRND

Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

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NRND

Rohm Semiconductor

MOSFET 2N-CH 30V 9A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SH8K15TB1

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	8.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	630 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	FET Feature
Rohm Semiconductor SH8K15TB1	2 W	630 pF	2 N-Channel (Dual)	150 °C	8-SOP	2.5 V	8.5 nC	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)	9 A	Surface Mount	30 V	Logic Level Gate

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General part information

Mosfet Array 30V 9A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available