PJQ4443P_R2_00001

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Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

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Panjit International Inc.

40V P-CHANNEL ENHANCEMENT MODE M

Technical Specifications

Parameters and characteristics for this part

Specification	PJQ4443P_R2_00001

Current - Continuous Drain (Id) @ 25°C	46 A, 8.8 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	2767 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.1 W, 59.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	DFN3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Power Dissipation (Max)	Package / Case
Panjit International Inc. PJQ4443P_R2_00001	23 nC	40 V	-55 °C	150 °C	DFN3333-8	P-Channel	2.5 V	8.8 A 46 A	4.5 V 10 V	MOSFET (Metal Oxide)	12 mOhm	Surface Mount	2767 pF	20 V	2.1 W 59.5 W	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 40 V 8.8A (Ta), 46A (Tc) 2.1W (Ta), 59.5W (Tc) Surface Mount DFN3333-8

Technical documentation and resources