
1N4150TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA DO35
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1N4150TAP
ActiveVishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 150MA DO35
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N4150TAP |
|---|---|
| Capacitance @ Vr, F | 2.5 pF |
| Current - Average Rectified (Io) | 150 mA |
| Current - Reverse Leakage @ Vr | 100 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-35, DO-204AH |
| Reverse Recovery Time (trr) | 4 ns |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1N4150 Series
Diode 50 V 150mA Through Hole DO-204AH (DO-35)
Documents
Technical documentation and resources