Technical Specifications
Parameters and characteristics for this part
| Specification | 1N6263 |
|---|---|
| Capacitance @ Vr, F | 2.2 pF |
| Current - Average Rectified (Io) | 15 mA |
| Current - Reverse Leakage @ Vr | 200 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 200 C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | Axial, DO-35, DO-204AH |
| Speed | Any Speed |
| Speed | 200 mA |
| Supplier Device Package | DO-35 |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
1N6263 Series
Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching.Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range.
Documents
Technical documentation and resources
