BAV45

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 20V 50MA TO18

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 20V 50MA TO18

Technical Specifications

Parameters and characteristics for this part

Specification	BAV45

Capacitance @ Vr, F	1.3 pF
Current - Average Rectified (Io)	50 mA
Current - Reverse Leakage @ Vr	5 pA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-18-2
Reverse Recovery Time (trr)	600 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	TO-18
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	20 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Mounting Type	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Supplier Device Package
Central Semiconductor Corp BAV45	Standard	20 V	125 °C	-65 C	1 V	Any Speed	200 mA	Through Hole	1.3 pF	5 pA	600 ns	50 mA	TO-18-2	TO-18

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 20 V 50mA Through Hole TO-18

Technical documentation and resources