VEC2315-TL-H

Unknown

ON Semiconductor

DUAL P-CHANNEL POWER MOSFET, -60V, -2.5A, 137MΩ

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-318AH-SOT-28FL / VEC8 +1

VEC2315-TL-H

Unknown

ON Semiconductor

DUAL P-CHANNEL POWER MOSFET, -60V, -2.5A, 137MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-318AH-SOT-28FL / VEC8 +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	VEC2315-TL-H

Configuration	2 P-Channel
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	137 mOhm
Supplier Device Package	SOT-28FL/VEC8
Technology	MOSFET (Metal Oxide)

VEC2315 Series

Dual P-Channel Power MOSFET, -60V, -2.5A, 137mΩ

Part	Rds On (Max) @ Id, Vgs	Operating Temperature	Power - Max [Max]	Mounting Type	Technology	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package
ON Semiconductor VEC2315-TL-H	137 mOhm	150 °C	1 W	Surface Mount	MOSFET (Metal Oxide)	Logic Level Gate	11 nC	2 P-Channel	420 pF	60 V	SOT-28FL/VEC8

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

VEC2315 Series

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.