MBR1045

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 10A TO220AC

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 45V 10A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	MBR1045

Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Speed	Speed	Technology	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Qualification	Grade
Taiwan Semiconductor Corporation MBR1045 C0G	TO-220-2	100 µA	45 V	Through Hole	10 A	Standard Recovery >500ns	200 mA	Standard	700 mV	TO-220AC	150 °C	-55 °C
Taiwan Semiconductor Corporation MBR1045	TO-220-2	100 µA	45 V	Through Hole	10 A		200 mA 500 ns	Schottky	700 mV	TO-220AC	150 °C	-55 °C
Taiwan Semiconductor Corporation MBR1045HC0G	TO-220-2	100 µA	45 V	Through Hole	10 A		200 mA 500 ns	Standard	700 mV	TO-220AC	150 °C	-55 °C	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 45 V 10A Through Hole TO-220AC

Technical documentation and resources