LXA03D530-TL

Active

Power Integrations

DIODE GEN PURP 530V 3A 8SO

Search across all available documentation for this part.

Active

Power Integrations

DIODE GEN PURP 530V 3A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	LXA03D530-TL

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	8-SOIC
Package / Case	0.154 in
Package / Case [custom]	7
Package / Case [custom]	3.9 mm
Reverse Recovery Time (trr)	34.3 ns
Speed	200 mA, 500 ns
Supplier Device Package	SO-8C
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	530 V
Voltage - Forward (Vf) (Max) @ If	1.71 V

Part	Mounting Type	Operating Temperature - Junction	Supplier Device Package	Package / Case	Speed	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case [custom]	Package / Case [custom]	Package / Case	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
Power Integrations LXA03T600	Through Hole	150 °C	TO-220AC	TO-220-2	200 mA 500 ns	250 µA	20 ns	3 A	600 V	Standard
Power Integrations LXA03D530-TL	Surface Mount	150 °C	SO-8C	8-SOIC	200 mA 500 ns	250 µA	34.3 ns	3 A	530 V	Standard	7	3.9 mm	0.154 in	15 pF	1.71 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 530 V 3A Surface Mount SO-8C

Technical documentation and resources