1N4448

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ON Semiconductor

SMALL SIGNAL DIODE, SINGLE, 100 V, 300 MA, 1 V, 4 NS, 4 A

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Active

ON Semiconductor

SMALL SIGNAL DIODE, SINGLE, 100 V, 300 MA, 1 V, 4 NS, 4 A

Technical Specifications

Parameters and characteristics for this part

Specification	1N4448

Capacitance @ Vr, F	2 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1 V

High Conductance Fast Diode

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Capacitance @ Vr, F	Mounting Type	Current - Average Rectified (Io)	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor 1N4448	5 µA	1 V	Axial DO-204AH DO-35	2 pF	Through Hole	200 mA	Any Speed	200 mA	100 V	Standard	4 ns	DO-35	175 ░C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	794	$ 1.03
		11539	$ 0.03
Newark	Each	500	$ 1.00
ON Semiconductor	N/A	1	$ 0.01

General part information

High Conductance Fast Diode

Technical documentation and resources