SI6963DQ

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ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8TSSOP

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ON Semiconductor

MOSFET 2P-CH 20V 3.8A 8TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	SI6963DQ

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
Gate Charge (Qg) (Max) @ Vgs	16 nC
Input Capacitance (Ciss) (Max) @ Vds	1015 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-TSSOP
Package / Case [custom]	0.173 "
Package / Case [custom]	4.4 mm
Power - Max [Max]	600 mW
Rds On (Max) @ Id, Vgs	43 mOhm
Supplier Device Package	8-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Mounting Type	Package / Case	Package / Case [custom]	Package / Case [custom]	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Configuration	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package
ON Semiconductor SI6963DQ	Surface Mount	8-TSSOP	0.173 "	4.4 mm	1015 pF	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	43 mOhm	600 mW	2 P-Channel	16 nC	1.5 V	3.8 A	8-TSSOP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1211	$ 0.25

General part information

Mosfet Array 20V 3.8A (Ta) 600mW (Ta) Surface Mount 8-TSSOP

Technical documentation and resources

No documents available