ZXTD4591E6TA

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Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 60V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON

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Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 60V V(BR)CEO, 2-ELEMENT, NPN AND PNP, SILICON

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTD4591E6TA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.1 W
Supplier Device Package	SOT-23-6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

Complementary, 60V, 1A, SOT26

Part	Vce Saturation (Max) @ Ib, Ic	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case
Diodes Inc ZXTD4591E6TA	500 mV	600 mV	150 MHz	SOT-23-6	100	-55 °C	150 °C	Surface Mount	60 V	1 A	1.1 W	1 NPN 1 PNP	100 nA	SOT-23-6
Diodes Inc ZXTD4591E6TC	500 mV	600 mV	150 MHz	SOT-23-6	100	-55 °C	150 °C	Surface Mount	60 V	1 A	1.1 W	1 NPN 1 PNP	100 nA	SOT-23-6

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Complementary, 60V, 1A, SOT26

Technical documentation and resources