Zenode.ai Logo
Beta
K
2ED2183S06FXUMA1 - null

2ED2183S06FXUMA1

Active
Infineon Technologies

THE 2ED2183S06F IS A 650 V, 2.5 A HIGH CURRENT HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE IN DSO-8 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

2ED2183S06FXUMA1 - null

2ED2183S06FXUMA1

Active
Infineon Technologies

THE 2ED2183S06F IS A 650 V, 2.5 A HIGH CURRENT HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE IN DSO-8 PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2ED2183S06FXUMA1
Channel TypeSynchronous
Current - Peak Output (Source, Sink) [custom]2.5 A
Current - Peak Output (Source, Sink) [custom]2.5 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]650 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]15 ns
Rise / Fall Time (Typ) [custom]15 ns
Supplier Device PackagePG-DSO-8-53
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.91
10$ 1.89
25$ 1.62
100$ 1.32
250$ 1.17
500$ 1.08
1000$ 1.01
Digi-Reel® 1$ 2.91
10$ 1.89
25$ 1.62
100$ 1.32
250$ 1.17
500$ 1.08
1000$ 1.01
Tape & Reel (TR) 2500$ 0.93
5000$ 0.88
7500$ 0.85
NewarkEach (Supplied on Cut Tape) 1$ 1.90
10$ 1.39
25$ 1.27
50$ 1.21
100$ 1.13
250$ 1.07
500$ 1.03

Description

General part information

2ED2183 Series

650 Vhalf-bridgehigh current, and high speed gate driver forMOSFETandIGBT,with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available:2ED21834S06J. Based onInfineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources

No documents available