6A05GHR0G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A R-6

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 6A R-6

Technical Specifications

Parameters and characteristics for this part

Specification	6A05GHR0G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	10 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	R-6, Axial
Qualification	AEC-Q101
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	R-6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Technology	Package / Case	Voltage - Forward (Vf) (Max) @ If	Qualification	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Grade	Current - Average Rectified (Io)	Capacitance @ Vr, F
Taiwan Semiconductor Corporation 6A05GHR0G	Standard	R-6 Axial	1.1 V	AEC-Q101	Standard Recovery >500ns	200 mA	10 µA	Through Hole	50 V	150 °C	-55 °C	R-6	Automotive	6 A	60 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 6A Through Hole R-6

Technical documentation and resources