RQ3E120ATTB
ActiveRohm Semiconductor
MOSFET, P-CH, -30V, -39A, HSMT
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RQ3E120ATTB
ActiveRohm Semiconductor
MOSFET, P-CH, -30V, -39A, HSMT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RQ3E120ATTB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 12 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.74 | |
| 10 | $ 0.64 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.37 | |||
| 1000 | $ 0.32 | |||
| Digi-Reel® | 1 | $ 0.74 | ||
| 10 | $ 0.64 | |||
| 100 | $ 0.44 | |||
| 500 | $ 0.37 | |||
| 1000 | $ 0.32 | |||
| Tape & Reel (TR) | 3000 | $ 0.28 | ||
| 6000 | $ 0.27 | |||
| 9000 | $ 0.25 | |||
| 30000 | $ 0.24 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.18 | |
| 10 | $ 0.73 | |||
| 25 | $ 0.65 | |||
| 50 | $ 0.57 | |||
| 100 | $ 0.49 | |||
| 250 | $ 0.44 | |||
| 500 | $ 0.38 | |||
| 1000 | $ 0.34 | |||
Description
General part information
RQ3E120AT Series
Middle Power MOSFET RQ3E120AT is suitable for switching power supply.
Documents
Technical documentation and resources