GC2X100MPS06-227

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GeneSiC Semiconductor

DIODE MOD SIC 650V 209A SOT227

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Unknown

GeneSiC Semiconductor

DIODE MOD SIC 650V 209A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GC2X100MPS06-227

Current - Average Rectified (Io) (per Diode)	209 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Package / Case	Mounting Type	Diode Configuration	Current - Reverse Leakage @ Vr	Technology
GeneSiC Semiconductor GC2X100MPS06-227	1.8 V	175 ░C	-55 C	209 A	650 V	SOT-227	0 ns	No Recovery Time	SOT-227-4 miniBLOC	Chassis Mount	2 Independent	20 µA	SiC (Silicon Carbide) Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 2 Independent 650 V 209A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources