STTFS015N10MCL

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ON Semiconductor

PTNG 100V LL IN SEREMBAN U8FL FOR INDUSTRIAL/ REEL

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ON Semiconductor

PTNG 100V LL IN SEREMBAN U8FL FOR INDUSTRIAL/ REEL

Technical Specifications

Parameters and characteristics for this part

Specification	STTFS015N10MCL

Current - Continuous Drain (Id) @ 25°C	10 A, 42 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds	1338 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max)	2.5 W, 45 W
Rds On (Max) @ Id, Vgs	12.9 mOhm
Supplier Device Package	8-WDFN (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3 V

Power MOSFET, N Channel, 100V, 42 A, 12.9mΩ

Part	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor STTFS015N10MCL	MOSFET (Metal Oxide)	8-PowerWDFN	12.9 mOhm	8-WDFN (3.3x3.3)	1338 pF	10 A 42 A	Surface Mount	4.5 V 10 V	20 V	100 V	-55 °C	150 °C	N-Channel	3 V	2.5 W 45 W	19 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Power MOSFET, N Channel, 100V, 42 A, 12.9mΩ

Technical documentation and resources