DHH55-36N1F

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IXYS

DIODE ARRAY GP 1800V 60A I4PAC

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IXYS

DIODE ARRAY GP 1800V 60A I4PAC

Technical Specifications

Parameters and characteristics for this part

Specification	DHH55-36N1F

Current - Average Rectified (Io) (per Diode)	60 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Series Connection
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	i4-Pac™-3
Reverse Recovery Time (trr)	230 ns
Speed	200 mA, 500 ns
Supplier Device Package	i4-PAC™
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If	2.04 V

Part	Supplier Device Package	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Diode Configuration	Current - Reverse Leakage @ Vr	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
IXYS DHH55-36N1F	i4-PAC™	60 A	2.04 V	Through Hole	1 Pair Series Connection	200 µA	200 mA 500 ns	i4-Pac™-3	1800 V	230 ns	Standard	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Series Connection 1800 V 60A Through Hole i4-Pac™-3

Technical documentation and resources