1N5833

Active

GeneSiC Semiconductor

30V 550MV@40A 40A DO-5 SCHOTTKY DIODES ROHS

Search across all available documentation for this part.

Active

GeneSiC Semiconductor

30V 550MV@40A 40A DO-5 SCHOTTKY DIODES ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	1N5833

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	20 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V

Part	Mounting Type	Current - Average Rectified (Io)	Technology	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor 1N5833	Chassis Stud Mount	40 A	Schottky	DO-203AB DO-5 Stud	DO-5	30 V	200 mA 500 ns	20 mA	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources