TK40S06N1L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 60V 40A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK40S06N1L,LXHQ

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	1650 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	88.2 W
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature	FET Type	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Rds On (Max) @ Id, Vgs [Max]
Toshiba Semiconductor and Storage TK40S06N1L,LQ	4.5 V 10 V	20 V	26 nC	40 A	MOSFET (Metal Oxide)	88.2 W	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	N-Channel	DPAK+	Surface Mount	60 V	1650 pF	10.5 mOhm
Toshiba Semiconductor and Storage TK40S06N1L,LXHQ	4.5 V 10 V	20 V	26 nC	40 A	MOSFET (Metal Oxide)	88.2 W	2.5 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C	N-Channel	DPAK+	Surface Mount	60 V	1650 pF		18 mOhm

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