2SK2103T100

NRND

Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MPT3, SC-62, 3 PIN

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NRND

Rohm Semiconductor

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 2A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MPT3, SC-62, 3 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2103T100

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	400 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]
Rohm Semiconductor 2SK2103T100	500 mW	MOSFET (Metal Oxide)	20 V	2 A	TO-243AA	150 °C	230 pF	30 V	N-Channel	Surface Mount	4 V	10 V	400 mOhm	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 2A (Ta) 500mW (Ta) Surface Mount MPT3

Technical documentation and resources