19MT050XF

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 500V 31A 16MTP

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 500V 31A 16MTP

Technical Specifications

Parameters and characteristics for this part

Specification	19MT050XF

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	7210 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	16-MTP Module
Power - Max [Max]	1140 W
Rds On (Max) @ Id, Vgs	220 mOhm
Supplier Device Package	16-MTP
Technology	MOSFET (Metal Oxide)

Part	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division 19MT050XF	16-MTP Module	500 V	220 mOhm	160 nC	4 N-Channel	31 A	150 °C	-40 °C	Chassis Mount	1140 W	7210 pF	MOSFET (Metal Oxide)	16-MTP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 500V 31A 1140W Chassis Mount 16-MTP

Technical documentation and resources