2N6109G

Obsolete

ON Semiconductor

7.0 A, 50V PNP BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

7.0 A, 50V PNP BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6109G

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

7.0 A, 50V PNP Bipolar Power Transistor

Part	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Package / Case	Frequency - Transition	Power - Max [Max]
ON Semiconductor 2N6109G	7 A	Through Hole	50 V	PNP	30 hFE	1 mA	150 °C	-65 °C	3.5 V	TO-220	TO-220-3	10 MHz	40 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Technical documentation and resources