2SB1495,Q(M

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 3A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 100V 3A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SB1495,Q(M

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	2 W
Supplier Device Package	TO-220NIS
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Operating Temperature	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage 2SB1495,Q(M	100 V	PNP	1.5 V	Through Hole	150 °C	TO-220-3 Full Pack	2000	TO-220NIS	2 W	10 µA	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 100 V 3 A 2 W Through Hole TO-220NIS

Technical documentation and resources