2SK1342-E

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 900V 6A 3000MOHM TO-3P

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Renesas Electronics Corporation

NCH SINGLE POWER MOSFET 900V 6A 3000MOHM TO-3P

Technical Specifications

Parameters and characteristics for this part

Specification	2SK1342-E

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1730 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Nch Single Power Mosfet 900V 6A 3000Mohm To-3P

Part	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Technology	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type
Renesas Electronics Corporation 2SK1342-E	Through Hole	10 V	30 V	SC-65-3 TO-3P-3	1730 pF	8 A	150 °C	TO-3P	MOSFET (Metal Oxide)	100 W	900 V	1.6 Ohm	N-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The 2SK1342 is a Nch Single Power Mosfet 900V 6A 3000Mohm To-3P.

Technical documentation and resources