RXR035N03TCL

NRND

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

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NRND

Rohm Semiconductor

MOSFET N-CH 30V 3.5A TSMT3

Technical Specifications

Parameters and characteristics for this part

Specification	RXR035N03TCL

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.3 nC
Input Capacitance (Ciss) (Max) @ Vds	180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-96
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TSMT3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Vgs (Max)	Package / Case
Rohm Semiconductor RXR035N03TCL	150 °C	180 pF	Surface Mount	3.3 nC	2.5 V	4 V	10 V	30 V	N-Channel	1 W	MOSFET (Metal Oxide)	3.5 A	50 mOhm	TSMT3	20 V	SC-96

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General part information

N-Channel 30 V 3.5A (Ta) 1W (Ta) Surface Mount TSMT3

Technical documentation and resources

No documents available