BYT28-300,127

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO220AB

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 300V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BYT28-300,127

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	60 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Operating Temperature - Junction	Mounting Type	Speed	Current - Average Rectified (Io) (per Diode)	Supplier Device Package	Diode Configuration	Package / Case	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Current - Reverse Leakage @ Vr
WeEn Semiconductors Co., Ltd BYT28-500,127	150 °C	Through Hole	200 mA 500 ns	10 A	TO-220AB	1 Pair Common Cathode	TO-220-3	60 ns	500 V	1.4 V	Standard
WeEn Semiconductors Co., Ltd BYT28-300,127	150 °C	Through Hole	200 mA 500 ns	10 A	TO-220AB	1 Pair Common Cathode	TO-220-3	60 ns	300 V	1.4 V	Standard	10 µA
WeEn Semiconductors Co., Ltd BYT28X-500Q	150 ¯C	Through Hole	200 mA 500 ns	10 A	TO-220F	1 Pair Common Cathode	TO-220-3 Full Pack Isolated Tab	60 ns	500 V	1.4 V	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 300 V 10A Through Hole TO-220-3

Technical documentation and resources

No documents available