2N4920G

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ON Semiconductor

TRANS GP BJT PNP 80V 1A 3-PIN TO-225 BULK

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ON Semiconductor

TRANS GP BJT PNP 80V 1A 3-PIN TO-225 BULK

Technical Specifications

Parameters and characteristics for this part

Specification	2N4920G

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce	30 hFE
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	TO-126
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

1.0 A, 80 V PNP Bipolar Power Transistor

Part	Operating Temperature [Max]	Operating Temperature [Min]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]
ON Semiconductor 2N4920G	150 °C	-65 °C	1 A	Through Hole	80 V	PNP	TO-126	30 W	3 MHz	TO-126-3 TO-225AA	30 hFE	600 mV	500 çA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The Power 3 A, 80 V Bipolar PNP Transistor is designed for driver circuits, switching and amplifier applications.