DMA30E1800HA

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IXYS

DIODE GEN PURP 1.8KV 30A TO247

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IXYS

DIODE GEN PURP 1.8KV 30A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	DMA30E1800HA

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-247
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1800 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Speed	Speed	Package / Case	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
IXYS DMA30E1800HA	40 µA	10 pF	1.25 V	30 A	175 ░C	-55 C	Standard	Standard Recovery >500ns	200 mA	TO-247-2	TO-247	Through Hole	1800 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1800 V 30A Through Hole TO-247

Technical documentation and resources