2ED1321S12MXUMA1
ActiveTHE 2ED1321S12M IS A 1200 V, 2.3 A/4.6 A HIGH-SIDE/LOW-SIDE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE AND OCP.
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2ED1321S12MXUMA1
ActiveTHE 2ED1321S12M IS A 1200 V, 2.3 A/4.6 A HIGH-SIDE/LOW-SIDE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE AND OCP.
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED1321S12MXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 2.3 A |
| Current - Peak Output (Source, Sink) [custom] | 4.6 A |
| Driven Configuration | Half-Bridge |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 1.1 V |
| Logic Voltage - VIL, VIH [custom] | 1.7 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 16-SOIC |
| Package / Case [x] | 0.295 in |
| Package / Case [y] | 7.5 mm |
| Rise / Fall Time (Typ) [custom] | 48 ns |
| Rise / Fall Time (Typ) [custom] | 48 ns |
| Supplier Device Package | PG-DSO-16-U02 |
| Voltage - Supply [Max] | 20 V |
| Voltage - Supply [Min] | 13 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.97 | |
| 10 | $ 4.46 | |||
| 25 | $ 4.22 | |||
| 100 | $ 3.65 | |||
| 250 | $ 3.47 | |||
| 500 | $ 3.11 | |||
| Digi-Reel® | 1 | $ 4.97 | ||
| 10 | $ 4.46 | |||
| 25 | $ 4.22 | |||
| 100 | $ 3.65 | |||
| 250 | $ 3.47 | |||
| 500 | $ 3.11 | |||
| Tape & Reel (TR) | 1000 | $ 2.62 | ||
| 2000 | $ 2.49 | |||
Description
General part information
2ED1321 Series
EiceDRIVER™ 1200 Vhigh-side/low-side gate driver ICwith typical 2.3 A source, 4.6 A sink current in DSO-16 (300mils) package for 1200 VSiC MOSFETandIGBTpower devices. The 2ED1321S12M is based on ourSOI-technologywhich has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.
Documents
Technical documentation and resources