UF3C120080B7S

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Qorvo

SICFET N-CH 1200V 28.8A D2PAK-7

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Qorvo

SICFET N-CH 1200V 28.8A D2PAK-7

Technical Specifications

Parameters and characteristics for this part

Specification	UF3C120080B7S

Current - Continuous Drain (Id) @ 25°C	28.8 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	754 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]	190 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	D2PAK-7
Technology	SiCFET (Cascode SiCJFET)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id [Max]	6 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Qorvo UF3C120080B7S	105 mOhm	190 W	28.8 A	6 V	23 nC	Surface Mount	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	-55 °C	175 ░C	SiCFET (Cascode SiCJFET)	N-Channel	D2PAK-7	1200 V	754 pF	25 V

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General part information

N-Channel 1200 V 28.8A (Tc) 190W (Tc) Surface Mount D2PAK-7

Technical documentation and resources

No documents available