VS-60APU04LHN3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 60A TO247AD

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 60A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	VS-60APU04LHN3

Current - Average Rectified (Io)	60 A
Current - Reverse Leakage @ Vr	50 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	85 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology
Vishay General Semiconductor - Diodes Division VS-60APU04LHN3	175 ░C	-55 C	50 µA	TO-247AD	85 ns	Through Hole	TO-247-3	400 V	200 mA 500 ns	1.25 V	60 A	Standard

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General part information

Diode 400 V 60A Through Hole TO-247AD

Technical documentation and resources