
STD110N02RT4G-VF01
ObsoleteON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 24V, 110A, 4.6MΩ
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STD110N02RT4G-VF01
ObsoleteON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 24V, 110A, 4.6MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | STD110N02RT4G-VF01 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32 A, 110 A |
| Drain to Source Voltage (Vdss) | 24 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 28 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 110 W, 2.88 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4.6 mOhm |
| Supplier Device Package | DPAK-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
STD110N02R Series
Automotive Power MOSFET. 24V, 110A, 4.6 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources