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STD110N02RT4G-VF01 - TO-252-3

STD110N02RT4G-VF01

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 24V, 110A, 4.6MΩ

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STD110N02RT4G-VF01 - TO-252-3

STD110N02RT4G-VF01

Obsolete
ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 24V, 110A, 4.6MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD110N02RT4G-VF01
Current - Continuous Drain (Id) @ 25°C32 A, 110 A
Drain to Source Voltage (Vdss)24 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]28 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds3440 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)110 W, 2.88 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs4.6 mOhm
Supplier Device PackageDPAK-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STD110N02R Series

Automotive Power MOSFET. 24V, 110A, 4.6 mOhm, Single N-Channel, DPAK, Logic Level. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.