
20ETS08
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220AC
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20ETS08
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220AC
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 20ETS08 |
|---|---|
| Current - Reverse Leakage @ Vr | 100 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-220AC |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
20ETS08 Series
Diode 800 V 20A Through Hole TO-220AC
Documents
Technical documentation and resources
No documents available