2SK2916(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO3PIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 500V 14A TO3PIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SK2916(F)

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	TO-3P(N)IS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Supplier Device Package	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage 2SK2916(F)	TO-3P(N)IS	150 °C	10 V	2600 pF	80 W	500 V	58 nC	14 A	MOSFET (Metal Oxide)	Through Hole	400 mOhm	N-Channel	SC-65-3 TO-3P-3	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 14A (Ta) 80W (Tc) Through Hole TO-3P(N)IS

Technical documentation and resources