1N4454-TR

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 75V 150MA DO35

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 75V 150MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N4454-TR

Current - Average Rectified (Io)	150 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-204AH (DO-35)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	75 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Speed	Reverse Recovery Time (trr)
Vishay General Semiconductor - Diodes Division 1N4454-TR	75 V	175 °C	DO-204AH (DO-35)	1 V	Standard	Axial DO-204AH DO-35	Through Hole	150 mA	5 µA	Any Speed	200 mA	4 ns

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General part information

Diode 75 V 150mA Through Hole DO-204AH (DO-35)

Technical documentation and resources