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SCT4026DEHRC11 - TO-247N

SCT4026DEHRC11

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 56A I(D), 750V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247,

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsHow to measure the oscillation occurs between parallel-connected devices4 Steps for Successful Thermal Designing of Power Devices+43
SCT4026DEHRC11 - TO-247N

SCT4026DEHRC11

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 56A I(D), 750V, 0.034OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET, TO-247,

Deep-Dive with AI

DocumentsHow to measure the oscillation occurs between parallel-connected devices4 Steps for Successful Thermal Designing of Power Devices+43

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4026DEHRC11
Current - Continuous Drain (Id) @ 25°C56 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]94 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2320 pF
Mounting TypeThrough Hole
Operating Temperature175 °C
Package / CaseTO-247-3
Power Dissipation (Max) [Max]176 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]34 mOhm
Supplier Device PackageTO-247N
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 12.62
30$ 7.61
120$ 6.51
510$ 6.19
NewarkEach 1$ 19.81
10$ 17.45
25$ 16.98
50$ 16.04
100$ 15.96
250$ 15.43
900$ 14.89

Description

General part information

SCT4026DEHR Series

AEC-Q101 qualified automotive grade product. SCT4026DEHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

How to measure the oscillation occurs between parallel-connected devices

Technical Article

4 Steps for Successful Thermal Designing of Power Devices

White Paper

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

SiC MOSFET Layout Design Considerations

Technical Article

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

How to Use PLECS Models

Technical Article

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

About Export Administration Regulations (EAR)

Export Information

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Anti-Whisker formation

Package Information

Judgment Criteria of Thermal Evaluation

Thermal Design

About Flammability of Materials

Environmental Data

Package Dimensions

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

PCB Layout Thermal Design Guide

Thermal Design

Compliance of the ELV directive

Environmental Data

How to Use LTspice&reg; Models: Tips for Improving Convergence

Schematic Design & Verification

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Types and Features of Transistors

Application Note

What Is Thermal Design

Thermal Design

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Taping Information

Package Information

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification