TK50E08K3,S1X(S

Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 75V 50A TO220-3

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Obsolete

Toshiba Semiconductor and Storage

MOSFET N-CH 75V 50A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	TK50E08K3,S1X(S

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	75 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	55 nC
Mounting Type	Through Hole
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)

Part	Rds On (Max) @ Id, Vgs	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type	Package / Case	FET Type	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage TK50E08K3,S1X(S	12 mOhm	MOSFET (Metal Oxide)	50 A	75 V	TO-220-3	Through Hole	TO-220-3	N-Channel	55 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 50A (Tc) Through Hole TO-220-3

Technical documentation and resources