2SA2070(TE12L,F)

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Toshiba Semiconductor and Storage

TRANS PNP 50V 1A PW-MINI

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Toshiba Semiconductor and Storage

TRANS PNP 50V 1A PW-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	2SA2070(TE12L,F)

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	1 W
Supplier Device Package	PW-MINI
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	200 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Operating Temperature	Mounting Type	Supplier Device Package
Toshiba Semiconductor and Storage 2SA2070(TE12L,F)	100 nA	200 mV	TO-243AA	50 V	1 W	1 A	200	PNP	150 °C	Surface Mount	PW-MINI

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General part information

Bipolar (BJT) Transistor PNP 50 V 1 A 1 W Surface Mount PW-MINI

Technical documentation and resources