PJT7601_R1_00001

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Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

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Panjit International Inc.

20V COMPLEMENTARY ENHANCEMENT MO

Technical Specifications

Parameters and characteristics for this part

Specification	PJT7601_R1_00001

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.2 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.4 nC
Input Capacitance (Ciss) (Max) @ Vds	67 pF, 38 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.2 Ohm, 400 mOhm
Supplier Device Package	SOT-363
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Power - Max [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	FET Feature	FET Feature	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C
Panjit International Inc. PJT7601_R1_00001	20 V	350 mW	6-TSSOP SC-88 SOT-363	1.2 Ohm 400 mOhm	38 pF 67 pF	SOT-363	1 V	1.4 nC	-55 °C	150 °C	N and P-Channel Complementary	1.2 V	Logic Level Gate	MOSFET (Metal Oxide)	Surface Mount	500 mA

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General part information

Mosfet Array 20V 500mA (Ta) 350mW (Ta) Surface Mount SOT-363

Technical documentation and resources