GHXS050B065S-D3

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SemiQ

DIODE MOD SIC SCHOT 650V SOT227

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SemiQ

DIODE MOD SIC SCHOT 650V SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS050B065S-D3

Current - Average Rectified (Io) (per Diode)	95 A
Current - Reverse Leakage @ Vr	125 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOT-227-4, miniBLOC
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type	Current - Average Rectified (Io) (per Diode)	Speed	Diode Configuration	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Speed
SemiQ GHXS050A170S-D3	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	150 A	No Recovery Time	2 Independent	750 µA	1700 V	1.9 V	SOT-227-4 miniBLOC	SOT-227
SemiQ GHXS050B065S-D3	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	95 A	No Recovery Time	2 Independent	125 µA	650 V	1.6 V	SOT-227-4 miniBLOC	SOT-227	0 ns
SemiQ GHXS050A060S-D3	175 ░C	-55 C	SiC (Silicon Carbide) Schottky	Chassis Mount	50 A		2 Independent	100 µA	600 V	1.8 V	SOT-227-4 miniBLOC	SOT-227		200 mA 500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 650 V 95A (DC) Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources