SGP6N60UFDTU

Obsolete

ON Semiconductor

IGBT 600V 6A 30W TO220

Search across all available documentation for this part.

Obsolete

ON Semiconductor

IGBT 600V 6A 30W TO220

Technical Specifications

Parameters and characteristics for this part

Specification	SGP6N60UFDTU

Current - Collector Pulsed (Icm)	25 A
Gate Charge	15 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	30 W
Reverse Recovery Time (trr)	52 ns
Supplier Device Package	TO-220-3
Switching Energy	25 µJ, 57 µJ
Td (on/off) @ 25°C	15 ns, 60 ns
Test Condition	15 V, 80 Ohm, 3 A, 300 V
Vce(on) (Max) @ Vge, Ic	2.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Test Condition	Mounting Type	Gate Charge	Switching Energy	Supplier Device Package	Power - Max [Max]	Td (on/off) @ 25°C	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor SGP6N60UFDTU	3 A 15 V 80 Ohm 300 V	Through Hole	15 nC	25 µJ 57 µJ	TO-220-3	30 W	15 ns 60 ns	52 ns	600 V	TO-220-3	2.6 V	25 A	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 600 V 6 A 30 W Through Hole TO-220-3

Technical documentation and resources