2N5302G

Obsolete

ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

HIGH POWER NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N5302G

Current - Collector (Ic) (Max) [Max]	30 A
DC Current Gain (hFE) (Min) @ Ic, Vce	15 hFE
Frequency - Transition	2 MHz
Mounting Type	Through Hole
Package / Case	TO-3, TO-204AA
Power - Max [Max]	200 W
Supplier Device Package	TO-204
Supplier Device Package	TO-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max)	60 V

High Power NPN Bipolar Power Transistor

Part	Power - Max [Max]	Transistor Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Frequency - Transition	Package / Case	Voltage - Collector Emitter Breakdown (Max)
ON Semiconductor 2N5302G	200 W	NPN	30 A	TO-204	TO-3	15 hFE	3 V	Through Hole	2 MHz	TO-204AA TO-3	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The High Power Bipolar NPN Transistor is designed for use in power amplifier and switching circuits applications.