RX3G18BGNC16

NRND

Rohm Semiconductor

MOSFET, N-CH, 40V, 180A, TO-220AB ROHS COMPLIANT: YES

Search across all available documentation for this part.

NRND

Rohm Semiconductor

MOSFET, N-CH, 40V, 180A, TO-220AB ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	RX3G18BGNC16

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	168 nC
Input Capacitance (Ciss) (Max) @ Vds	12000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	1.64 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Operating Temperature	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor RX3G18BGNC16	150 °C	20 V	180 A	125 W	2.5 V	40 V	TO-220AB	TO-220-3	4.5 V 10 V	1.64 mOhm	MOSFET (Metal Oxide)	Through Hole	12000 pF	N-Channel	168 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 180A (Tc) 125W (Tc) Through Hole TO-220AB

Technical documentation and resources